product specification www.jmnic.com silicon npn power transistors 2SD1274 2SD1274a 2SD1274b description ? ? with to-220fa package ? high v cbo ? high speed switching applications ? power amplifier applicaitons pinning pin description 1 base 2 collector 3 emitter fig.1 simplified outline (to-220fa) and symbol absolute maximum ratings at tc=25 ?? symbol parameter conditions value unit 2SD1274 150 2SD1274a 200 v cbo collector-base voltage 2SD1274b open emitter 250 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 5 a t c =25 ?? 40 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? jm nic
product specification www.jmnic.com jm nic silicon npn power transistors 2SD1274 2SD1274a 2SD1274b characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a, l=25mh 80 v v ebo emitter-base voltage i e =1ma, i c =0 6 v v cesat collector-emitter saturation voltage i c =5a; i b =1a 1.6 v v be base-emitter voltage i c =5a ; v ce =4v 1.5 v 2SD1274 v cb =150v; i e =0 2SD1274a v cb =200v; i e =0 i cbo collector cut-off current 2SD1274b v cb =250v; i e =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 50 | a h fe dc current gain i c =5a ; v ce =4v 14 f t transition frequency i c =0.5a ; v ce =10v 40 mhz t f fall time i c =5a ;i b1 =0.8a v eb =-5v 1.0 | s
product specification www.jmnic.com jm nic silicon npn power transistors 2SD1274 2SD1274a 2SD1274b package outline fig.2 outline dimensions (unindicated tolerance: ? 0.15 mm)
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